S- Series Specification
| Item | Description |
|---|---|
| Reaction Type | Plasma (O2, N2, NH3, H2) & Thermal (DIW) |
| Substrate Size | 8 inch (200mm) |
| Substrate Access | Using Loadlock Loading |
| Dimension(W x L x H) | 880 x 1880 x 1794 mm |
| Weight | < 500 kg |
| Uniformity | ≤ ± 2 % (Within 25 point EE15 mm, Wafer to Wafer) |
| Cycle time | ≤ 10 sec/Cycle |
| Growth Per Cycle | ≤ 1.2 Å/Cycle |
| Deposition Rate | ≥ 7 Å/min (Ref, Al2O3) |
| Plasma Power Source (LP-200 Model) | RF 13.56 MHz, CCP Type, 600 W |
| Base Pressure | ≤ 5.0 x 10-3 Torr (≤ 5 min) |
| Process Pressure | 0.5 ~ 2 Torr |
| Substrate Temperature | Max. 400 ℃, ≤ ±1 % (On Set Temp) |
| Materials | Chamber: Al6061 / Heater: Al Block Heater |
| Gas Box | Source Canister (3 set) Reactant Canister (1 set_DIW) Reactant Gas Line (2 set_O2, N2, or NH3) |
| Available Deposition Film | Metal Oxide by O2 Plasma / DIW / O2 Metal Nitride by NH3, N2, H2 Plasma Metal by H2 Plasma |
| O3 Generator (Option) | 210 g/m3, 2 L/min |
| Vacuum Gauge | Baratron Gauge (<10 Torr) |
| Pump Type | Dry Pump: (>1,500 LPM) |
| ETC | By-pass Line at each Feeding Line |
| Laptop Notebook Control |