System Specification |
Process Type |
Thermal & Plasma Enhanced Time Divided ALD |
Gases Flow Type |
Dual Showerhead Gas Injection |
Available Film |
Dielectric Film (High-K, Low-K) |
Metal Oxide, Metal Sulfide, Metal |
Deposition Rate |
Al2O3 ≥ 10Å/min |
Film Uniformity |
Al2O3 ± 1% on the 12” Wafer |
Substrate Size |
6”,8” and 12” or Square Substrate |
Substrate Temperature |
25 ~ 250 ℃ |
Vacuum Control |
Capacitance Manometer & Throttle Valve |
Base Pressure |
< 5.0 x 10-3 Torr |
Facilities Requirements Specification |
Gases |
Inert Gas, More than 4~6 Bar |
Air |
CDA, More Than 4~6 Bar |
Power of Mini ALD |
3 Phase, 220V/380V, 50/60Hz, 125A |
Vacuum Pump |
Needed Dry Pump |